2009. 8. 17 1/4 semiconductor technical data KMB3D0P30SA p-ch trench mosfet revision no : 2 general description this trench mosfet has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for portable equipment. features h v dss =-30v, i d =-3a h drain to source on-state resistance. r ds(on) =80m ? (max.) @ v gs =-10v r ds(on) =140m ? (max.) @ v gs =-4.5v h super high dense cell design maximum rating (ta=25 ? ) dim millimeters sot-23 a bc d e 2.93 0.20 1.30+0.20/-0.150.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q 0.1 max 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q pin connection (top view) 2 3 1 gs d 1 2 3 note1)surface mounted on 1 u ? 1 u fr4 board, t ? 5sec. characteristic symbol p-ch unit drain to source voltage v dss -30 v gate to source voltage v gss ? 20 v drain current dc@t a =25 ? (note1) i d -3 a pulsed (note1) i dp -12 drain power dissipation t a =25 ? (note1) p d 1.25 w t a =70 ? (note1) 0.8 maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal resistance, junction to ambient (note1) r thja 100 ? /w downloaded from: http:///
2009. 8. 17 2/4 KMB3D0P30SA revision no : 2 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain to source breakdown voltage bv dss i ds =-250 a, v gs =0v, -30 - - v drain cut-off current i dss v gs =0v, v ds =-24v - - -1 a v gs =0v, v ds =-24v, t j =55 ? - - -10 gate to source leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na gate to source threshold voltage v th v ds =v gs, i d =-250 a -1.0 - -3.0 v drain to sourcesource on resistance r ds(on) v gs =-10v, i d =-3a (note2) - 64 80 m ? v gs =-4.5v, i d =-2.5a (note2) - 103 140 on state drain current i d(on) v gs =-10v, v ds =-5v (note2) -12 - - a forward transconductance g fs v ds =-10v, i d =-3a (note2) - 4.5 - s dynamic input capacitance c iss v ds =-15v, v gs = 0v, f=1mhz, - 365 - pf output capacitance c oss - 72 - reverse transfer capacitance c rss - 37 - total gate charge q g v ds =-15v, v gs =-10v, i d =-3a (note2) - 6.3 - nc gate to source charge q gs - 1.1 - gate to drain charge q gd - 1.6 - turn-on delay time t d(on) v dd =-15v, v gs =-10v i d =-1a, r g =6 ? (note2) - 6.9 - ns turn-on rise time t r - 16 - turn-off delay time t d(off) - 18 - turn-off fall time t f - 15 - source-drain diode ratings continuous source current i s - - - -3.0 a pulsed source current i sp - (note2) - - -12 a source to drain forward voltage v sd v gs =0v, i s =-1.25a (note2) - - -1.2 v note2) pulse test : pulse width <300 k , duty cycle < 2% downloaded from: http:///
2009. 8. 17 3/4 KMB3D0P30SA revision no : 2 10.0v 0 0 -0.5 3 6 9 12 -1.0 -1.5 -2.0 -2.5 -3.0 3.5v v gs =3.0v drain - current i d (a) 0 0 4 100 200 81 21 6 gate-source volatage v gs (v) 0 01 4 8 12 2345 normalized drain- source on-resistance r ds(on) (m ) 0 60 120100 20 40 80 -25 150 50 75 100 125 25 -50 0 -75 common sourcev ds =10v, i d =3a pulse test common sourcev ds =5v pulse test c common sourcetc=25 pulse test junction temperature tj ( ) c -75 -50 -25 0 50 100 75 125 150 25 0 1 42 53 junction temperature t j ( ) c common sourcev gs =v ds i d =250 a pulse test gate threshold voltage v th (v) source - drain forward voltage v sdf (v) 0.8 1.2 0 0.4 1.6 2.0 0 2 10 84 6 common sourcet c = 25 pulse test c drain current i d (a) drain - source voltage v ds (v) drain current i d (a) drain source on resistance r ds(on) ( ) fig2. r ds -i d fig4. r ds(on) - t j fig5. v th - t j fig6. i dr - v sdf -55 c 25 c 125 c v gs =4.5v v gs =10v 4.5v 4.0v 5.0v fig1. i d - v ds fig3. i d - v gs reverse source-drain current i dr (a) downloaded from: http:///
2009. 8. 17 4/4 KMB3D0P30SA revision no : 2 gate charge q g (nc) fig8. c - v ds drain to source voltage v ds (v) 0 - 10 - 6 - 2 - 4 - 8 5.6 4.2 1.4 2.8 07 . 0 fig9. q g - v gs capacitance c (pf) gate to source voltage v gs (v) 0 240 600480 360 120 c oss c iss c rss f = 1mhz -10 0 -5 -30 -20 -25 -15 v ds = - 15 v i d = - 3.0a fig11 . transient thermal response curve drain current i d (a) drain to source voltage v ds (v) fig10. safe operation area -10 -2 -10 -2 -10 -1 -10 0 -10 1 -10 2 -10 -1 -10 0 -10 2 -10 1 v gs = -10v single pulset j = 25 c r ds(on) limited square wave pulse duration tw ( sec ) 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 -4 10 -3 10 -2 10 -1 10 0 10 1 normalized effective transient thermal resistance 0.02 0.01 0.1 0.2 0.05 single pulse t 1 t 2 p dm 1. duty cycle d = t 1 /t 2 2. r thja =110 c/w duty cycle = 0.5 fig7. r ds(on) - v gs 0 8040 200160 120 -6 -4 -10 -8 -2 i d = - 3.0a gate to source voltage v gs (v) drain to source on resistance r ds(on) (m ) tj=25 c tj=150 c 1ms 200 s 10ms 100ms dc downloaded from: http:///
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